STMICROELECTRONICS

PD57006S-E

6W 65V 945MHz N-CH LDMOS RF Transistor, 15dB Gain

Stmicroelectronics

PD57006S-E

Name: PD57006S-E Stmicroelectronics
Brand: Stmicroelectronics
SKU: PD57006S-E

6W 65V 945MHz N-CH LDMOS RF Transistor, 15dB Gain

6W LDMOS transistor for RF applications, operating up to 945MHz with 15dB power gain at 28V test voltage. Features a 65V drain-to-source breakdown voltage and 1A continuous drain current. Housed in a PSO-10RF plastic package for surface mounting, this N-CHANNEL transistor offers a wide operating temperature range from -65°C to 165°C and is RoHS compliant.

Frequency945MHz

Voltage Rating65V

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics PD57006S-E technical specifications.

General

Continuous Drain Current (ID)	1A
Drain to Source Breakdown Voltage	65V
Drain to Source Voltage (Vdss)	65V
DS Breakdown Voltage-Min	65V
Frequency	945MHz
Gain	15dB
Gate to Source Voltage (Vgs)	20V
Lead Free	Lead Free
Max Frequency	945MHz
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Max Output Power	6W
Max Power Dissipation	20W
Mount	Surface Mount
Number of Elements	1
Output Power	6W
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	20W
Power Gain	15dB
Radiation Hardening	No
RoHS Compliant	Yes
Test Voltage	28V
Voltage Rating	65V