N-Channel RF MOSFET transistor featuring 65V drain-source breakdown voltage and 2.5A continuous drain current. Operates up to 1GHz with 16.5dB power gain and 18W maximum output power. Surface mountable in a 3-Pin PowerSO-10RF package, this RoHS compliant component offers a wide operating temperature range from -65°C to 165°C.
Frequency945MHz
Voltage Rating65V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics PD57018-E technical specifications.
General
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
760mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
945MHz
Gain
16.5dB
Gate to Source Voltage (Vgs)
20V
Height
3.5mm
Lead Free
Lead Free
Length
7.5mm
Max Frequency
1GHz
Max Operating Temperature
165°C
Min Operating Temperature
-65°C
Max Output Power
18W
Max Power Dissipation
31.7W
Mount
Surface Mount
Number of Elements
1
Operating Frequency
1 GHz
Output Power
18W
Package Quantity
400
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
31.7W
Power Gain
16.5dB
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
DC Rated Voltage
65V
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics PD57018-E Datasheet
Download the complete datasheet for Stmicroelectronics PD57018-E to view detailed technical specifications.
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