
30W LDMOS transistor for RF applications, operating up to 1GHz. Features 65V drain-to-source breakdown voltage and 4A continuous drain current. Delivers 14dB gain at 945MHz with 30W output power at a 28V test voltage. Housed in a PSO-10RF surface-mount plastic package, this N-channel transistor is RoHS compliant and lead-free, with an operating temperature range of -65°C to 165°C.
Stmicroelectronics PD57030S-E technical specifications.
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 945MHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 52.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 30W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52.8W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| RoHS | Compliant |
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