PD57030S-E

30W LDMOS transistor for RF applications, operating up to 1GHz. Features 65V drain-to-source breakdown voltage and 4A continuous drain current. Delivers 14dB gain at 945MHz with 30W output power at a 28V test voltage. Housed in a PSO-10RF surface-mount plastic package, this N-channel transistor is RoHS compliant and lead-free, with an operating temperature range of -65°C to 165°C.