PD57060S-E

60W 28V 1GHz LDMOS RF Transistor N-CH 65V 7A SM

60W LDMOS RF Transistor for high-frequency applications up to 1GHz. Features 65V drain-to-source breakdown voltage and 7A continuous drain current. Delivers 14.3dB gain at 945MHz with a 28V test voltage. Operates from -65°C to 165°C, housed in a surface-mount PSO-10RF plastic package. RoHS compliant and lead-free.

Frequency945MHz

Voltage Rating65V

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics PD57060S-E technical specifications.

General

Continuous Drain Current (ID)	7A
Drain to Source Breakdown Voltage	65V
Drain to Source Voltage (Vdss)	65V
Frequency	945MHz
Gain	14.3dB
Gate to Source Voltage (Vgs)	20V
Lead Free	Lead Free
Max Frequency	1GHz
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Max Output Power	60W
Max Power Dissipation	79W
Mount	Surface Mount
Number of Elements	1
Output Power	60W
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	79W
Radiation Hardening	No
RoHS Compliant	Yes
Technology	LDMOS
Test Voltage	28V
Voltage Rating	65V
DC Rated Voltage	65V