The PD57070S-E is a high-frequency N-channel RF transistor with a maximum operating temperature of 165°C and a minimum operating temperature of -65°C. It has a maximum drain to source breakdown voltage of 65V and a maximum drain to source voltage of 65V. The transistor is RoHS compliant and has a maximum power dissipation of 95W. It is available in a small outline package with a quantity of 50 units per packaging. The PD57070S-E is suitable for high-frequency applications up to 1GHz and has a gain of 14.7dB.
Frequency945MHz
Voltage Rating65V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics PD57070S-E technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 945MHz |
| Gain | 14.7dB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 70W |
| Max Power Dissipation | 95W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 70W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics PD57070S-E Datasheet
Download the complete datasheet for Stmicroelectronics PD57070S-E to view detailed technical specifications.
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