N-channel LDMOS RF power transistor designed for high-frequency applications. Features a 25V drain-to-source breakdown voltage and a continuous drain current of 5A. Operates efficiently at 870MHz with a gain of 15dB, supporting up to 1GHz maximum frequency. Offers a maximum output power of 6W and a power dissipation of 31W. Packaged for surface mounting in tape and reel, this RoHS compliant component operates from -65°C to 150°C.
Frequency870MHz
Voltage Rating25V
Current Rating5A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics PD84006L-E technical specifications.
General
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 870MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 15V |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 6W |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 2W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 7.5V |
| Voltage Rating | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics PD84006L-E Datasheet
Download the complete datasheet for Stmicroelectronics PD84006L-E to view detailed technical specifications.
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