The PD84008L-E is an N-CHANNEL RF transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum power dissipation of 26.7W and an output power of 2W. The transistor is packaged in a CHIP CARRIER, S-PQCC-N5 package and is mounted on the surface. It is RoHS compliant and has a voltage rating of 25V.
Stmicroelectronics PD84008L-E technical specifications.
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 870MHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 15V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 26.7W |
| Mount | Surface Mount |
| Output Power | 2W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 26.7W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 7.5V |
| Voltage Rating | 25V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PD84008L-E to view detailed technical specifications.
No datasheet is available for this part.
