RF MOSFET N-Channel transistor, single enhancement mode, designed for surface mount applications. Features a 3-pin PowerSO-10RF (Formed lead) plastic package with gull-wing leads. Operates with a maximum drain-source voltage of 40V and a continuous drain current of 2A, achieving a maximum frequency of 1000MHz. Offers a typical power gain of 17dB and an output power of 6W, with a typical input capacitance of 16pF at 13.6V. Extended operating temperature range from -65°C to 165°C.
PackagePowerSO-10RF (Formed lead)
MountingSurface Mount
Power6(Typ)W
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Technical Specifications
Stmicroelectronics PD85006-E technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
PowerSO-10RF (Formed lead)
Package/Case
PowerSO-10RF (Formed lead)
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
9.5
Package Width (mm)
9.4
Package Height (mm)
3.5
Package Material
Plastic
Mounting
Surface Mount
Channel Type
N
Configuration
Single
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Continuous Drain Current
2A
Maximum Frequency
1000MHz
Maximum Power Dissipation
36500mW
Min Operating Temperature
-65°C
Max Operating Temperature
165°C
Typical Power Gain
17dB
Output Power
6(Typ)W
Typical Input Capacitance @ Vds
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics PD85006-E Datasheet
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