6W LDMOS RF transistor operating at 870MHz, featuring 40V drain-to-source breakdown voltage and 2A continuous drain current. This N-channel device delivers 5W output power at 13.6V test voltage with 17dB gain, supporting up to 1GHz operation. Encased in a PowerFLAT plastic package for surface mounting, it offers a wide operating temperature range from -65°C to 150°C and is RoHS compliant.
Frequency870MHz
Voltage Rating40V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics PD85006L-E technical specifications.
General
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 870MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 15V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 6W |
| Max Power Dissipation | 20.8W |
| Mount | Surface Mount |
| Number of Elements | 4 |
| Output Power | 5W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 20.8W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 13.6V |
| Voltage Rating | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics PD85006L-E Datasheet
Download the complete datasheet for Stmicroelectronics PD85006L-E to view detailed technical specifications.
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