
The PD85025C is a high-frequency N-CHANNEL RF transistor with a maximum operating temperature of 200°C and a minimum operating temperature of -65°C. It has a continuous drain current of 7A and a drain to source breakdown voltage of 40V. The transistor is packaged in a FLANGE MOUNT, R-CDFM-F2 package and is RoHS compliant. It is suitable for use in high-power applications with a maximum output power of 30W and a maximum power dissipation of 93W.
Stmicroelectronics PD85025C technical specifications.
| Package/Case | M |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 945MHz |
| Gain | 17.5dB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Frequency | 1GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 93W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 10W |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 93W |
| RoHS Compliant | Yes |
| Test Voltage | 13.6V |
| Voltage Rating | 40V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PD85025C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
