Stmicroelectronics
SCT1000N170
Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
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Technical Specifications
Stmicroelectronics SCT1000N170 technical specifications.
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Stmicroelectronics SCT1000N170 Datasheet
Download the complete datasheet for Stmicroelectronics SCT1000N170 to view detailed technical specifications.
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