Stmicroelectronics
SCT10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Quick Jump:
Technical Specifications
Stmicroelectronics SCT10N120 technical specifications.
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics SCT10N120 Datasheet
Download the complete datasheet for Stmicroelectronics SCT10N120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.