Stmicroelectronics
SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
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Technical Specifications
Stmicroelectronics SCT50N120 technical specifications.
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics SCT50N120 Datasheet
Download the complete datasheet for Stmicroelectronics SCT50N120 to view detailed technical specifications.
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