Stmicroelectronics
SCTW35N65G2V
Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
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Technical Specifications
Stmicroelectronics SCTW35N65G2V technical specifications.
Compliance
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics SCTW35N65G2V Datasheet
Download the complete datasheet for Stmicroelectronics SCTW35N65G2V to view detailed technical specifications.
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