Stmicroelectronics
SCTW70N120G2V
Silicon carbide Power MOSFET 1200 V, 91 A, 21 mOhm (typ. TJ = 25 C) in an HiP247 package
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Technical Specifications
Stmicroelectronics SCTW70N120G2V technical specifications.
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics SCTW70N120G2V Datasheet
Download the complete datasheet for Stmicroelectronics SCTW70N120G2V to view detailed technical specifications.
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