Stmicroelectronics
SCTWA10N120
Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package
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Technical Specifications
Stmicroelectronics SCTWA10N120 technical specifications.
Compliance
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics SCTWA10N120 Datasheet
Download the complete datasheet for Stmicroelectronics SCTWA10N120 to view detailed technical specifications.
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