
N-channel RF Power MOSFET for UHF band applications, featuring a 65V drain-to-source breakdown voltage and 5A continuous drain current. Operates efficiently from 2MHz to 500MHz with a typical gain of 15dB at 400MHz. Delivers 30W maximum output power and 100W power dissipation, suitable for surface mount applications in a 5-pin plastic package. Rated for operation between -65°C and 150°C, this lead-free and RoHS compliant component offers robust performance.
Stmicroelectronics SD2903 technical specifications.
| Package/Case | M |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 400MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 23pF |
| Lead Free | Lead Free |
| Max Frequency | 500MHz |
| Min Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Output Power | 30W |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics SD2903 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
