N-channel RF Power MOSFET designed for UHF band applications, featuring a 65V drain-to-source breakdown voltage and a continuous drain current of 5A. This transistor operates effectively from 2MHz to 500MHz, delivering 30W of output power with a typical gain of 11.5dB at 400MHz. Housed in a 4-pin plastic M113 package with screw mounting, it offers a maximum power dissipation of 100W and operates across a wide temperature range of -65°C to 200°C. This lead-free and RoHS compliant component is supplied in bulk packaging.
Frequency400MHz
PackageM
Voltage Rating65V
MountingScrew
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Technical Specifications
Stmicroelectronics SD2904 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
Frequency
400MHz
Gain
11.5dB
Gate to Source Voltage (Vgs)
20V
Input Capacitance
47pF
Lead Free
Lead Free
Max Frequency
500MHz
Min Frequency
2MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
100W
Mount
Screw
Number of Elements
1
Output Power
30W
Package Quantity
25
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
100W
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
DC Rated Voltage
65V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD2904 Datasheet
Download the complete datasheet for Stmicroelectronics SD2904 to view detailed technical specifications.
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