N-channel RF transistor delivering 30W output power at 30MHz, featuring a 125V drain-to-source breakdown voltage and 50V test voltage. Operates with a continuous drain current of 6A and a gate-to-source voltage of 20V, offering 22dB gain. Housed in an M package for screw mounting, this component supports a maximum operating frequency of 200MHz and a maximum power dissipation of 175W. It is lead-free, RoHS compliant, and operates across a temperature range of -65°C to 200°C.
Frequency30MHz
PackageM
Voltage Rating125V
MountingScrew
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Technical Specifications
Stmicroelectronics SD2918 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
125V
Drain to Source Voltage (Vdss)
5V
DS Breakdown Voltage-Min
125V
Frequency
30MHz
Gain
22dB
Gate to Source Voltage (Vgs)
20V
Height
7.11mm
Input Capacitance
58pF
Lead Free
Lead Free
Length
24.89mm
Max Frequency
200MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
175W
Mount
Screw
Number of Elements
1
Output Power
30W
Package Quantity
25
Packaging
Tray
Polarity
N-CHANNEL
Power Dissipation
175W
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
125V
DC Rated Voltage
125V
Width
6.48mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD2918 Datasheet
Download the complete datasheet for Stmicroelectronics SD2918 to view detailed technical specifications.
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