N-Channel RF Transistor, 300W output power at 150 MHz, featuring 125V Drain to Source Breakdown Voltage and 40A Continuous Drain Current. This DMOS transistor offers a maximum power dissipation of 648W and a power gain of 23.5dB. Designed for HF/VHF applications, it operates within a temperature range of -65°C to 200°C and is housed in an M package for screw mounting. RoHS compliant and lead-free.
Frequency30MHz
PackageM
Voltage Rating125V
MountingScrew
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Technical Specifications
Stmicroelectronics SD2933 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
125V
Drain to Source Voltage (Vdss)
125V
DS Breakdown Voltage-Min
125V
Frequency
30MHz
Gain
23.5dB
Gate to Source Voltage (Vgs)
20V
Height
7.11mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
28.96mm
Max Frequency
150MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
400W
Max Power Dissipation
648W
Mount
Screw
Number of Elements
1
Operating Frequency
150 MHz
Output Power
300W
Package Quantity
25
Packaging
Tray
Polarity
N-CHANNEL
Power Dissipation
648W
Power Gain
23.5dB
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
125V
DC Rated Voltage
125V
Width
16.13mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD2933 Datasheet
Download the complete datasheet for Stmicroelectronics SD2933 to view detailed technical specifications.
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