
N-channel RF DMOS transistor delivering 175W output power at 175MHz, with a 50V test voltage and 130V drain-to-source breakdown voltage. Features include 20A continuous drain current, 15.8dB power gain, and a maximum operating temperature of 200°C. Packaged in a screw-mount M case, this RoHS compliant component is designed for high-frequency applications.
Stmicroelectronics SD2941-10 technical specifications.
| Package/Case | M |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 130V |
| Drain to Source Voltage (Vdss) | 130V |
| Frequency | 175MHz |
| Gain | 15.8dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 415pF |
| Lead Free | Lead Free |
| Max Frequency | 230MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 200W |
| Max Power Dissipation | 389W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 175W |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 389W |
| Power Gain | 15.8dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 130V |
| DC Rated Voltage | 130V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics SD2941-10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
