N-channel LDMOS transistor designed for RF applications, operating from 470MHz to 860MHz. Delivers 100W maximum output power at 28V test voltage, with a continuous drain current of 14A. Features a drain-to-source breakdown voltage of 65V and a gain of 16dB. Housed in a push-pull package with screw mounting, this lead-free and RoHS compliant component offers a wide operating temperature range from -65°C to 200°C.
Frequency860MHz
PackageM
Voltage Rating65V
MountingScrew
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Technical Specifications
Stmicroelectronics SD56120 technical specifications.
General
| Package/Case | M |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 860MHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 82pF |
| Lead Free | Lead Free |
| Max Frequency | 860MHz |
| Min Frequency | 470MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 100W |
| Max Power Dissipation | 217W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 100W |
| Package Quantity | 15 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 217W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics SD56120 Datasheet
Download the complete datasheet for Stmicroelectronics SD56120 to view detailed technical specifications.
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