NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 1A. This single-element transistor is housed in a 3-pin SOT-32 (TO-126) plastic package with through-hole mounting. It offers a maximum power dissipation of 20000mW and operates within a temperature range of -55°C to 150°C.
PackageSOT-32
MountingThrough Hole
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Technical Specifications
Stmicroelectronics ST13003N technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-126
Package/Case
SOT-32
Package Description
Small-Outline Transistor
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
7.8(Max)
Package Width (mm)
2.7(Max)
Package Height (mm)
10.8(Max)
Pin Pitch (mm)
2.2
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Emitter Base Voltage
9V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
1A
Maximum Power Dissipation
20000mW
Minimum DC Current Gain
[email protected]@2V|5@1A@10V
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics ST13003N Datasheet
Download the complete datasheet for Stmicroelectronics ST13003N to view detailed technical specifications.
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