NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 1A. This single-element transistor is housed in a 3-pin SOT-32 (TO-126) plastic package with through-hole mounting. It offers a maximum power dissipation of 20000mW and operates within a temperature range of -55°C to 150°C.
PackageSOT-32
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics ST13003N technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-126 |
| Package/Case | SOT-32 |
| Package Description | Small-Outline Transistor |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 7.8(Max) |
| Package Width (mm) | 2.7(Max) |
| Package Height (mm) | 10.8(Max) |
| Pin Pitch (mm) | 2.2 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 9V |
| Maximum Collector-Emitter Voltage | 400V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 20000mW |
| Minimum DC Current Gain | [email protected]@2V|5@1A@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics ST13003N Datasheet
Download the complete datasheet for Stmicroelectronics ST13003N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.