N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers low 8mΩ typical drain-to-source resistance and 150W maximum power dissipation. Designed for surface mounting in a TO-263-3 (D2PAK) package, operating from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 27ns and fall time of 15ns.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB100N10F7 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
100V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
4.369nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
8mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
46ns
Turn-On Delay Time
27ns
Weight
0.139332oz
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB100N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STB100N10F7 to view detailed technical specifications.
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