Stmicroelectronics
STB100NF03L-03-1
N-channel 30 V, 0.0026 Ohm typ., 100 A StripFET(TM) II Power MOSFET in a D2PAK package
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STB100NF03L-03-1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
95ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
6.2nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
3.2mR
RoHS Compliant
Yes
Series
STripFET™ III
Turn-Off Delay Time
115ns
Turn-On Delay Time
35ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB100NF03L-03-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB100NF03L-03-1 to view detailed technical specifications.
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