N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. This surface-mount device offers a low 600mΩ typical Rds(on) and is housed in a D2PAK package. Key performance characteristics include a 150°C maximum operating temperature and 85W power dissipation. Ideal for high-voltage applications, it boasts fast switching times with a turn-on delay of 8.8ns and fall time of 13.2ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power85W
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Technical Specifications
Stmicroelectronics STB10N60M2 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
85W
Rds On Max
600mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
32.5ns
Turn-On Delay Time
8.8ns
Weight
0.139332oz
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB10N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STB10N60M2 to view detailed technical specifications.
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