N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. This surface-mount device offers a low 600mΩ typical Rds(on) and is housed in a D2PAK package. Key performance characteristics include a 150°C maximum operating temperature and 85W power dissipation. Ideal for high-voltage applications, it boasts fast switching times with a turn-on delay of 8.8ns and fall time of 13.2ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power85W
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Technical Specifications
Stmicroelectronics STB10N60M2 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 13.2ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 32.5ns |
| Turn-On Delay Time | 8.8ns |
| Weight | 0.139332oz |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB10N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STB10N60M2 to view detailed technical specifications.
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