N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This component offers a low 0.65 Ohm typical drain-source on-resistance and 115W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 20ns turn-on delay and 30ns fall time, with a 30V gate-to-source voltage rating.
PackageTO-262-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB10NK60Z-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.37nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB10NK60Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB10NK60Z-1 to view detailed technical specifications.
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