N-channel power MOSFET, TO-263 package, 525V drain-source breakdown voltage, 10A continuous drain current, and 0.51 ohm maximum drain-source on-resistance. Features include 125W power dissipation, 1.4nF input capacitance, and 3.75V threshold voltage. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Surface mountable with tape and reel packaging.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STB11N52K3 technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
525V
Drain to Source Voltage (Vdss)
525V
Drain-source On Resistance-Max
410MR
Fall Time
42ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
510mR
Reach SVHC Compliant
No
RoHS Compliant
No
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
281ns
Turn-On Delay Time
7ns
Width
10.4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics STB11N52K3 Datasheet
Download the complete datasheet for Stmicroelectronics STB11N52K3 to view detailed technical specifications.
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