N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 9A continuous drain current. Offers a low 480mΩ typical drain-to-source resistance. Designed for surface mounting in a D2PAK package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 85W. Includes 23ns turn-on and turn-off delay times.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power85W
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Technical Specifications
Stmicroelectronics STB11N65M5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
650V
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
644pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
85W
Radiation Hardening
No
Rds On Max
480mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
23ns
Turn-On Delay Time
23ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB11N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB11N65M5 to view detailed technical specifications.
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