N-channel power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This MDmesh™ series component offers a low 450mΩ Rds On and 11ns fall time, with a maximum power dissipation of 160W. Designed for through-hole mounting in a TO-262-3 package, it operates from -65°C to 150°C and is RoHS compliant.
PackageTO-262-3
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB11NM60-1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
650V
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
450mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
6ns
Turn-On Delay Time
20ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB11NM60-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB11NM60-1 to view detailed technical specifications.
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