N-channel power MOSFET featuring 100V drain-source breakdown voltage and 110A continuous drain current. Offers low 9 mOhm typical on-state resistance at a nominal 4V gate-source voltage. Designed for surface mounting in a D2PAK package, this device boasts a maximum power dissipation of 312W and operates within a -55°C to 175°C temperature range. Includes fast switching characteristics with a 25ns turn-on delay and 68ns fall time.
PackageD2PAK
Current Rating120A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB120NF10T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
110A
Current Rating
120A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
10.5mR
Dual Supply Voltage
100V
Fall Time
68ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
5.2nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
312W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
10.5mR
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
312W
Radiation Hardening
No
Rds On Max
10.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
132ns
Turn-On Delay Time
25ns
DC Rated Voltage
100V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB120NF10T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB120NF10T4 to view detailed technical specifications.
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