N-channel SuperMESH™ Power MOSFET, 800V drain-source breakdown voltage, 10.5A continuous drain current, and 750mΩ maximum drain-source on-resistance. Features Zener protection, 190W power dissipation, and a D2PAK surface-mount package. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Includes 2.62nF input capacitance and fast switching times with 30ns turn-on and 70ns turn-off delays.
PackageD2PAK
Current Rating10.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB12NK80ZT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
10.5A
Current Rating
10.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
750mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
750mR
Dual Supply Voltage
800V
Fall Time
20ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
2.62nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Surface Mount
Nominal Vgs
3.75V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
750mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Termination
SMD/SMT
Threshold Voltage
3.75V
Turn-Off Delay Time
70ns
Turn-On Delay Time
30ns
DC Rated Voltage
800V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB12NK80ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB12NK80ZT4 to view detailed technical specifications.
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