The STB12NM50FDT4 is a surface mount N-channel MOSFET with a maximum operating temperature of -65°C to 150°C. It has a maximum power dissipation of 160W and a maximum drain to source breakdown voltage of 500V. The device has a continuous drain current rating of 12A and a drain to source resistance of 400mR. It is lead free and RoHS compliant, packaged in a D2PAK case.
PackageD2PAK
Current Rating12A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STB12NM50FDT4 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Turn-Off Delay Time | 39ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB12NM50FDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB12NM50FDT4 to view detailed technical specifications.
No datasheet is available for this part.