N-Channel Power MOSFET, D2PAK package, featuring 500V drain-source breakdown voltage and 11A continuous drain current. Offers a low 380mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 3V. Designed for surface mounting with a maximum power dissipation of 100W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 14ns. RoHS compliant.
PackageD2PAK
Current Rating11A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB12NM50N technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
380MR
Dual Supply Voltage
500V
Fall Time
14ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
940pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Nominal Vgs
3V
On-State Resistance
380mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1kW
Radiation Hardening
No
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
15ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB12NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STB12NM50N to view detailed technical specifications.
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