N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 11A continuous drain current. Offers low 0.29 Ohm typical drain-source on-resistance and 100W power dissipation. Designed for surface mounting in a D2PAK package, this component boasts fast switching characteristics with a 17ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STB12NM50ND technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
290mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
380mR
RoHS Compliant
Yes
Series
FDmesh™
Turn-Off Delay Time
40ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB12NM50ND Datasheet
Download the complete datasheet for Stmicroelectronics STB12NM50ND to view detailed technical specifications.
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