N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 11A continuous drain current. Offers low 0.29 Ohm typical drain-source on-resistance and 100W power dissipation. Designed for surface mounting in a D2PAK package, this component boasts fast switching characteristics with a 17ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STB12NM50ND technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB12NM50ND Datasheet
Download the complete datasheet for Stmicroelectronics STB12NM50ND to view detailed technical specifications.
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