Stmicroelectronics
STB12NM60N
10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STB12NM60N technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
410mR
Drain to Source Voltage (Vdss)
600V
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
960pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
410mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
60ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB12NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB12NM60N to view detailed technical specifications.
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