The STB13005-1 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 400V and a maximum collector current of 4A. It is packaged in a TO-262-3 package and is designed for through-hole mounting. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It is RoHS compliant and available in quantities of 50 per rail/tube packaging.
PackageTO-262-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics STB13005-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Collector Emitter Breakdown Voltage | 400V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 9V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB13005-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB13005-1 to view detailed technical specifications.
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