High voltage NPN bipolar junction transistor designed for fast switching applications. Features a 400V collector-emitter breakdown voltage and 8A continuous collector current. This surface-mount device is housed in a D2PAK package, offering 80W maximum power dissipation. Operating temperature range spans from -65°C to 150°C, with RoHS compliance.
PackageD2PAK
Current Rating8A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Stmicroelectronics STB13007DT4 technical specifications.
General
Package/Case
D2PAK
Collector Base Voltage (VCBO)
700V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
3V
Current Rating
8A
Emitter Base Voltage (VEBO)
9V
hFE Min
8
Lead Free
Lead Free
Max Breakdown Voltage
400V
Max Collector Current
8A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
80W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
400V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB13007DT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB13007DT4 to view detailed technical specifications.
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