N-channel MOSFET with 33V drain-source breakdown voltage and 80A continuous drain current. Features low 9mΩ drain-source on-resistance and 300W maximum power dissipation. Operates from -55°C to 175°C, with 18V gate-source voltage rating. Packaged in a D2PAK surface-mount case, supplied on tape and reel.
PackageD2PAK
Current Rating80A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB130NS04ZBT4 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 33V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 33V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 18V |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | MESH OVERLAY™ |
| Turn-Off Delay Time | 220ns |
| Turn-On Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB130NS04ZBT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB130NS04ZBT4 to view detailed technical specifications.
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