N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This surface mount device offers a low 380mΩ maximum drain-source on-resistance and 110W power dissipation. Designed for high-frequency switching, it exhibits a typical fall time of 9.5ns and turn-on delay of 11ns. Encased in a D2PAK package, this RoHS compliant component operates from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STB13N60M2 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
380mR
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
580pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
380mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
41ns
Turn-On Delay Time
11ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STB13N60M2 to view detailed technical specifications.
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