N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 12A continuous drain current. Offers a low 0.37 Ohm typical drain-source on-resistance and a maximum of 450mR. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 16ns turn-on delay and 16ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB13N80K5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
450mR
Fall Time
16ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
870pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
450mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
42ns
Turn-On Delay Time
16ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB13N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STB13N80K5 to view detailed technical specifications.
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