N-channel Power MOSFET, 600V drain-source voltage, 11A continuous drain current, and 360mOhm maximum drain-source resistance. This surface-mount device features a D2PAK package with gull-wing leads, a 3-pin configuration, and is constructed using MDmesh II process technology. It offers a maximum power dissipation of 90W and operates within a temperature range of -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STB13NM60N technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
9.35(Max)
Package Height (mm)
4.6(Max)
Seated Plane Height (mm)
4.83(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh II
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
11A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
360@10VmOhm
Typical Gate Charge @ Vgs
27@10VnC
Typical Gate Charge @ 10V
27nC
Typical Input Capacitance @ Vds
790@50VpF
Maximum Power Dissipation
90000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STB13NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB13NM60N to view detailed technical specifications.
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