The STB141NF55-1 is a high-power N-channel power MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 300W and a continuous drain current of 80A. The device is packaged in a TO-262-3 package and is mounted through-hole. The STB141NF55-1 is RoHS compliant and features a drain to source breakdown voltage of 55V and a drain to source resistance of 8mR.
PackageTO-262-3
Resistance-0.0065R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB141NF55-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.3nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 8mR |
| Resistance | -0.0065R |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 125ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB141NF55-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB141NF55-1 to view detailed technical specifications.
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