Stmicroelectronics
STB14NK50Z-1
N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET
PackageTO-262-3
Resistance-0.34R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB14NK50Z-1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Fall Time
12ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Rds On Max
380mR
Resistance
-0.34R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
54ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB14NK50Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB14NK50Z-1 to view detailed technical specifications.
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