N-channel Power MOSFET in a D2PAK (TO-263) surface-mount package. Features 30V drain-source voltage, 80A continuous drain current, and low 3mOhm drain-source resistance at 10V. This single-element MOSFET utilizes STripFET process technology and offers a maximum power dissipation of 110W. The D2PAK package has a gull-wing lead shape and is designed for surface mounting.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STB150N3LH6 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 9.35(Max) |
| Package Height (mm) | 4.6(Max) |
| Seated Plane Height (mm) | 4.83(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | STripFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 80A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 3@10VmOhm |
| Typical Gate Charge @ Vgs | 80@10VnC |
| Typical Gate Charge @ 10V | 80nC |
| Typical Input Capacitance @ Vds | 3800@25VpF |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Stmicroelectronics STB150N3LH6 Datasheet
Download the complete datasheet for Stmicroelectronics STB150N3LH6 to view detailed technical specifications.
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