N-channel Power MOSFET featuring 30V drain-source voltage and 80A continuous drain current. Offers low 2.5 mOhm on-resistance and is housed in a D2PAK surface-mount package. Designed with DeepGATE™ and STripFET™ VI technology, it boasts fast switching speeds with 20ns turn-on and fall times. Maximum power dissipation is 110W, with operating temperatures ranging from -55°C to 175°C. This RoHS compliant component is supplied on tape and reel.
PackageD2PAK
MountingSurface Mount
Power70W
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Technical Specifications
Stmicroelectronics STB155N3H6 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
3.65nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Threshold Voltage
2V
Turn-Off Delay Time
50ns
Turn-On Delay Time
20ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB155N3H6 Datasheet
Download the complete datasheet for Stmicroelectronics STB155N3H6 to view detailed technical specifications.
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