N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 11A continuous drain current. Offers a low 0.308 Ohm typical drain-source on-resistance, with a maximum of 340mR. Encased in a surface-mount D2PAK package, this component operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 85W. RoHS compliant and lead-free, it includes a gate-source voltage rating of 25V.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power85W
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Technical Specifications
Stmicroelectronics STB15N65M5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
340mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
340MR
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
810pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
85W
Radiation Hardening
No
Rds On Max
340mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
30ns
Turn-On Delay Time
30ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB15N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB15N65M5 to view detailed technical specifications.
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