N-channel Power MOSFET featuring 800V drain-source voltage and 14A continuous drain current. This single-element SuperMESH technology MOSFET is housed in a 3-pin D2PAK (TO-263) surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of ±30V, a typical gate threshold voltage of 5V, and a maximum drain-source on-resistance of 375mOhm at 10V. It offers a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STB15N80K5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
9.35(Max)
Package Height (mm)
4.6(Max)
Seated Plane Height (mm)
4.83(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperMESH
Maximum Drain Source Voltage
800V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
14A
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
375@10VmOhm
Typical Gate Charge @ Vgs
32@10VnC
Typical Gate Charge @ 10V
32nC
Typical Input Capacitance @ Vds
1100@100VpF
Maximum Power Dissipation
190000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STB15N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STB15N80K5 to view detailed technical specifications.
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