N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 14A continuous drain current. Offers 299mΩ maximum drain-source on-resistance and 125W power dissipation. Designed for surface mount applications in a D2PAK package, this component boasts fast switching speeds with turn-on delay of 17ns and fall time of 28ns. Operating temperature range from -55°C to 150°C, with RoHS compliance.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STB15NM60ND technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 299MR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 1.25nF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 17ns |
| Width | 10.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB15NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STB15NM60ND to view detailed technical specifications.
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