
The STB15NM65N is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 12A and a maximum power dissipation of 150W. The device features a drain to source breakdown voltage of 650V and a drain to source resistance of 270mR. It is packaged in a D2PAK and is lead free.
Stmicroelectronics STB15NM65N technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 270mR |
| Series | MDmesh™ |
| Turn-Off Delay Time | 80ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB15NM65N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
